Article · October 30, 2018

Структура пленок карбида кремния, синтезированных методом магнетронного распыления

Kair Kh. Nussupov, Н. Б. Бейсенханов, Dina I. Bakranova, Symaiyl Keiinbay, Bekbolat Seitov

Abstract

This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystal silicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering and to establish new regularities in the influence of heat treatment on composition, crystallization processes and structure of layers. A principal difference between this method of synthesis and the traditionally used magnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and a graphite target. In the deposition mode: rf - 150 W, 13.56 MHz; Ar - 2.4 l/h, 0.4 Pa; 100°C, 10800 s, an amorphous SiСх film with a high density of ~ 3.52 g/cm3 containing nanoclusters with a predominance of shortened SiC bonds absorbing at 860 cm-1, was obtained. Rapid annealing (970°С, 5 min, vacuum) leads to partial disintegration of clusters, an improvement in the structure of the film, the formation of α-SiC, β-SiC and Si nanocrystals and a decrease in the density of the film. Based on the data of X-ray diffraction and density of the film (3,522 and 3,397 g/cm3 before and after annealing, respectively), it was suggested that there are inclusions of diamond and dense clusters.

Silicon Carbide Semiconductor TechnologiesDiamond and Carbon-based Materials ResearchMetal and Thin Film Mechanicssilicon carbide thin filmsamorphous silicon interlayersingle-crystal silicon substrate

Структура пленок карбида кремния, синтезированных методом магнетронного распыления

Abstract

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