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Article · Physics of the Solid State · December 20, 2019

Синтез тонких пленок TiN, Ti и TiSi-=SUB=-2-=/SUB=- для контактной системы солнечных элементов

К. Х. Нусупов, Н. Б. Бейсенханов, Dina I. Bakranova, Symaiyl Keiinbay, A. A. Turakhun, А.А. Султан

Dina Bakranova
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Abstract

Abstract The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N_2 gas flow rate 0.9–3.6 L/h, the Ar gas flow rate 0.06‒3.6 L/h, the ratio of N_2/Ar gas flows 1–60 on the thickness, the density, and the composition of the deposited films is analyzed. The maximum density 5.247 g/cm^3 corresponding to the TiN_0.786 = Ti_56N_44 composition has been achieved at the following deposition parameters: 1200 W, N/Ar = 1.8/0.06 L/h = 30, 0.8 Pa, 320 s, and 100°C. At temperatures 700–800°C, the mutual diffusion of titanium and silicon atoms through the interface leads to the active nucleation, the formation of nanocrystals and low-resistance metallization layers. X-ray diffraction shows that, during annealing at 700°C (30 min, Ar), the formation of phase TiSi_2 due to the diffusion of Ti atoms into silicon is twice more intense than the formation of Ti_5Si_3 due to the diffusion of silicon atoms into titanium as a result of high hardness of titanium. The average sizes of TiSi_2 decreases from 7.1 to 5.6 nm at 750°C due to the crystallization of the nuclei and increase to 9.2 nm at 800°C.

Semiconductor materials and interfacesSilicon and Solar Cell TechnologiesCopper Interconnects and Reliabilitythin filmstitanium nitridetitanium

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