Article · Physical Sciences and Technology · January 1, 2018
The formation of SiC films by magnetron sputtering
Kair Kh. Nussupov, Н. Б. Бейсенханов, Bekbolat Seitov, Dina I. Bakranova, Symaiyl Keiinbay
Abstract
This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystalsilicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering as well as toestablish new regularities in the influence of heat treatment on composition, crystallization processes andstructure of layers. A principal difference between the method of synthesis and the traditionally usedmagnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and agraphite target. An amorphous SiC0.97 film with a density of 3.179 g/cm3 and 165 nm thick was obtainedunder the deposition regime: rf = 150 W, 13.56 MHz; Ar – 2.4 l/h, 0.4 Pa; 100°C, 2400 s; containing SiCnanocrystals after annealing (1100°C, 30 min, Ar). Synthesis of an amorphous SiCx film with a density of3.204 g/cm3 at a long sputtering of Si and C targets – 14400 s, containing nanoclusters with apredominance of truncated SiC bonds, was carried out.
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