Publications
Article · Superlattices and Microstructures · August 1, 2017
Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon
Sergey A. Kukushkin, Kair Kh. Nussupov, Andrey V. Osipov, Н. Б. Бейсенханов, Dina I. Bakranova
Silicon Carbide Semiconductor TechnologiesDiamond and Carbon-based Materials ResearchSemiconductor materials and interfacessilicon carbide thin filmsepitaxial growthatomic substitution
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