Article · Physics of the Solid State · December 1, 2019
Low-Temperature Synthesis of α-SiC Nanocrystals
Kair Kh. Nussupov, Н. Б. Бейсенханов, Dina I. Bakranova, Symaiyl Keiinbay, A. A. Turakhun, A. A. Sultan
Abstract
Thick SiCx films have been deposited on a c-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon targets. The X-ray diffraction study shows that fast annealing of the SiCx film deposited on the c-Si surface for 3 h leads to the low-temperature (970°C) formation of hexagonal structural phases α-SiC (6H-SiC and other) along with the cubic modification of silicon carbide β-SiC. The IR spectroscopy has shown the formation of SiC nanocrystal nuclei due to the energy action of the rf plasma ions on the upper layer of the SiC film during its growth. The data of X-ray reflectometry demonstrate a high density of the films up to 3.59 g/cm2 as a result of formation of dense C and SiC clusters in the layers under action of the rf plasma.
More by Dina Bakranova
- Experimentally validated hybrid CFD-machine learning framework for predicting hydrogen evolution reaction performance of Ba0.5Ca0.5CoO3 perovskite electrocatalystResults in Engineering · 2026
- Silicon-Based Composite Photocatalyst for Solar-Driven Photocatalytic Water PurificationJournal of Composites Science · 2026
- EFFECT OF WET CHEMICAL ETCHING ON IMPURITY REMOVAL AND PHOTOCATALYTIC PERFORMANCE OF METALLURGICAL SILICON POWDERNNC RK Bulletin · 2026
- INFLUENCE OF HUMIDITY AND ENVIRONMENTAL CONDITIONS ON THE EFFICIENCY OF PHOTOCATALYTIC AIR PURIFICATION. A BRIEF ANALYSISNNC RK Bulletin · 2026