Article · IEEE Journal of the Electron Devices Society · November 3, 2020

Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches

Anwar Jarndal, Saddam Husain, Mohammad Hashmi, Fadhel M. Ghannouchi

Abstract

This article presents an extensive study and demonstration of efficient electrothermal large-signal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm (GA) with Artificial Neural Networks (ANN), and Particle Swarm optimization (PSO) with Support Vector Regression (SVR). Another promising Gaussian Process Regression (GPR) based large-signal modeling approach is also explored and presented. The GA-ANN addresses the typical problem of local minima associated with the backpropagation (BP) based ANN. The GA successfully aids in the determination of optimal initial values for BP-ANN and enables it to find a unique optimal solution after subsequent of iterations with higher rate of convergence. This is also achieved using PSO-SVR with lower optimization variables. The developed modeling techniques are demonstrated and used to simulate the gate and drain currents of a 2-mm GaN device. All the models are relatively simple, practical, and easy to implement. The gate and drain currents models are embedded in an equivalent large-signal circuit's model and built in Advanced Design System (ADS) software. The implemented model is validated by large-signal measurements and very good fitting results have been obtained. The model also showed an accurate simulation for a nonlinear power amplifier with very good computational speed and convergence.

Advanced Power Amplifier DesignGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesGaN HEMTlarge-signal modelingelectro-thermal modeling

Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches

Abstract

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