Article · Journal of Physics D Applied Physics · December 14, 1993

Diagnostics of plasma parameters of RF discharges in CF3Br during etching of semiconductors

Svetlana V. Avtaeva, D. K. Otorbaev

Abstract

The non-equilibrium plasma diagnostic methods of emission spectroscopy, optical actinometry and thermocouples have been applied to determine the parameters of RF low-pressure gas discharges in CF 3 Br. The spatial distributions of the absolute concentrations of the plasma's more important components-fluorine and bromine atoms-as well as the axial and radial distributions of the temperature of the heavy particles (gas) have been determined as functions of the discharge characteristics. The spatial distribution of the heat sources in the discharge has been reconstructed from the temperature measurements. The results of the reconstruction show that the discharge power is dissipated mainly in the regions near the electrodes. The data obtained allow the authors to draw some conclusions about the mechanisms of formation of plasma parameters during etching of silicon in halogen-containing low-pressure RF plasmas.

Low-Pressure Plasma Processing and DiagnosticsAtmospheric-Pressure Plasma ApplicationsVacuum and Plasma ArcsRF dischargeCF3Brsemiconductor etching

Diagnostics of plasma parameters of RF discharges in CF3Br during etching of semiconductors

Abstract

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